2SK2345 silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switchingregulator, dc-dc converter outline 1 2 3
to-220fm 1. gate
2. drain
3. source d g s
2SK2345 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 350 v gate to source voltage v gss 30 v drain current i d 6a drain peak current i d(pulse) * 1 24 a body to drain diode reverse drain current i dr 6a channel dissipation pch* 2 35 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK2345 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 350 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 25 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 350 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.6 0.8 w i d = 3 a v gs = 10 v* 1 forward transfer admittance |y fs | 2.5 4.5 s i d = 3 a v ds = 10 v* 1 input capacitance ciss 635 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 230 pf reverse transfer capacitance crss 40 pf turn-on delay time t d(on) 10nsi d = 3 a v gs = 10 v r l = 10 w rise time t r 40ns turn-off delay time t d(off) 60ns fall time t f 35ns body to drain diode forward voltage v df 0.95 v i f = 6 a, v gs = 0 body to drain diode reverse recovery time t rr 230 ns i f = 6 a, v gs = 0, dif / dt = 100 a / m s note 1. pulse test see characteristic curves of 2sk1400a.
2SK2345 4 40
30
20
10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d 1 maximum safe operation area 3 10 30 100 300 1000 50 20 10 2 5 1 0.2 0.1 0.05 0.5 100 ? 10 ? 1 ms pw = 10 ms (1shot) dc operation (tc = 25 ?) operation in
this area is
limited by r ds(on) ta = 25 ? pulse width pw (s) normalized transient thermal impedance s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 3.57 ?/w, tc = 25 ? q g q
q tc = 25? normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
2SK2345 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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